| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,222 pcs
|
3222 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
508 pcs
|
508 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
13 pcs
|
13 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Input Logic Level | |
| Lead Spacing | |
| Logic Type | |
| Max Propagation Delay @ V, Max CL | |
| Military Grade | |
| Mounting Type | |
| Number of Circuits | |
| Number of Inputs | |
| Operating Temperature | |
| Operating Temperature Range | |
| Package Quantity | |
| Supplier Device Package | |
| Supplier Package | |
| Voltage |
The CD4011BF3A from Texas Instruments is a high-reliability, military-grade integrated circuit featuring four independent 2-input NAND gates. This device is designed for operation across a wide voltage range, from 3V to 18V, making it suitable for diverse applications. It offers buffered inputs and outputs, standardized symmetrical output characteristics, and a maximum input current of 1 μA at 18V.
The CD4011BF3A operates within a temperature range of -55°C to 125°C, ensuring performance in demanding environments. Its propagation delay is typically 60 ns at 10V with a 50 pF load. The device is housed in a 14-lead Ceramic Dual In-line Package (CDIP), suitable for through-hole mounting.
This NAND gate is part of the "B" series CMOS devices, meeting JEDEC standards. It provides essential logic functions for digital systems requiring robust and reliable performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $12.88 | $12.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
3V to 18V.
14-CDIP (0.300", 7.62mm) through-hole.
-55°C to 125°C.
4.
60 ns at 10V, 50pF.
NAND Gate.
1 µA at 18V over full temperature range, and 100 nA at 25°C.