| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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14 pcs
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14 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
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The Central Semiconductor Corp CBRHDSH1-100 is a high-density, 1-amp silicon Schottky bridge rectifier designed for low voltage full wave rectification applications. This surface mount device offers a peak repetitive reverse voltage of 100V and an average forward current rating of 1A.
Key electrical characteristics include a low leakage current, with a typical value of 0.04µA at 100V VRRM. The forward voltage drop is also minimized, with a maximum of 700mV at 1A. The operating junction temperature ranges from -50°C to +125°C, and storage temperature is from -55°C to +150°C.
Packaged in an HD DIP surface mount case, the CBRHDSH1-100 is suitable for various electronic designs requiring efficient rectification. The molding compound used in this device has a UL flammability classification of 94V-O.
This rectifier is a reliable component for power supply circuits, voltage doublers, and other general-purpose rectification needs where Schottky performance is desired.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.44 | $0.44 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum peak repetitive reverse voltage is 100V.
The average forward current is 1A.
The maximum forward voltage is 750mV at 1.0A.
The mounting type is Surface Mount.
The operating junction temperature range is -50°C to +125°C.
The peak forward surge current is 20A.
The maximum power dissipation is 1.2W.