CAT25010VI-GT3 The ON Semiconductor CAT25010VI-GT3 is a 1Kbit EEPROM device featuring an SPI interface and operating at speeds up to 20MHz. It is supplied in an 8-SOIC package.
Mfr Part #:

CAT25010VI-GT3

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor CAT25010VI-GT3 is a 1Kbit EEPROM device featuring an SPI interface and operating at speeds up to 20MHz. It is supplied in an 8-SOIC package.
✓ Total Stock: 15,072 pcs
$ Price Range: $1.28

CAT25010VI-GT3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
9,072 pcs
9072 pcs On Request 1 On Request On Request 17+16+ On Request On Request
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request

CAT25010VI-GT3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
SVHC Present
Supplier Device Package
Supplier Package
Technology
Voltage
Write Cycle Time

CAT25010VI-GT3 Description

Short technical summary and product information.

The CAT25010VI-GT3 from ON Semiconductor is a 1Kbit serial EEPROM designed for use in a wide range of applications. It supports the Serial Peripheral Interface (SPI) protocol, allowing for efficient data communication with microcontrollers and other digital systems. The device operates over a wide supply voltage range of 1.8V to 5.5V and is compatible with SPI modes 0,0 and 1,1.

 

This EEPROM features a 16-byte page write buffer, enabling efficient data writes. It also includes hardware and software write protection capabilities, allowing for partial or full array protection. The CAT25010VI-GT3 boasts a high endurance of 1,000,000 program/erase cycles and data retention of 100 years, ensuring reliability and longevity.

 

Packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, this component is suitable for various electronic designs. Its operating temperature range is -40°C to 85°C, making it suitable for industrial applications.

CAT25010VI-GT3 Quick Information

Product Type: EEPROM
Canonical Name: CAT25010VI-GT3 EEPROM Serial 1/2/4-Kb SPI Device
Subcategory: Serial SPI

CAT25010VI-GT3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

CAT25010VI-GT3 Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

CAT25010VI-GT3 Features

  • 1Kbit serial EEPROM with SPI interface.
  • Operates from 1.8V to 5.5V supply.
  • Supports 20MHz SPI communication.
  • 16-byte page write buffer included.
  • 1,000,000 program/erase cycles.

CAT25010VI-GT3 Applications

  • Ideal for data storage in embedded systems.
  • Suitable for configuration data retention.
  • Used in industrial control applications.
  • Applicable in consumer electronics designs.

CAT25010VI-GT3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the memory size of the CAT25010VI-GT3?

The CAT25010VI-GT3 has a memory size of 1Kbit.

What is the operating voltage range for this EEPROM?

The operating voltage range for the CAT25010VI-GT3 is 1.8V to 5.5V.

What is the maximum SPI frequency supported?

The device supports SPI communication up to 20MHz at 5V.

What package type is the CAT25010VI-GT3 supplied in?

The CAT25010VI-GT3 is supplied in an 8-SOIC package.

What is the operating temperature range?

The operating temperature range is -40°C to 85°C.

How many program/erase cycles can this EEPROM withstand?

The CAT25010VI-GT3 can withstand 1,000,000 program/erase cycles.

What is the data retention period for this memory?

The data retention period for this memory is 100 years.

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