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CA3227M The CA3227M from Intersil is a small signal bipolar transistor array containing 5 NPN transistors. It features a 3 GHz transition frequency, 8 V collector-emitter breakdown voltage, and 20 mA collector current in a surface-mount 16-SOIC package.
Mfr Part #:

CA3227M

Available from 1 distributors
Mfr Name: Intersil
Intersil
The CA3227M from Intersil is a small signal bipolar transistor array containing 5 NPN transistors. It features a 3 GHz transition frequency, 8 V collector-emitter breakdown voltage, and 20 mA collector current in a surface-mount 16-SOIC package.
✓ Total Stock: 13,000 pcs

CA3227M Available from 1 distributor

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✓ Non-Authorised
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Xingangxin ✓
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13,000 pcs
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13000 pcs On Request 1 On Request On Request On Request On Request On Request
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CA3227M Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Supplier Device Package
Transistor Type
Voltage
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CA3227M Description

Short technical summary and product information.

The CA3227M is a small signal bipolar transistor array from Intersil, containing five NPN transistors in a single 16-SOIC package. Designed for RF applications, it offers a transition frequency of 3 GHz, making it suitable for high-frequency signal amplification and switching. Each transistor has a collector-emitter breakdown voltage (Vceo) of 8 V and a maximum collector current of 20 mA, with a power dissipation of 85 mW. The DC current gain (hFE) is a minimum of 40 at Ic=1 mA and Vce=6 V. The device is surface-mount packaged in a 16-SOIC (0.154", 3.90mm width) case, with a supplier device package of 16-SOIC. This compact array is ideal for space-constrained RF designs requiring multiple matched transistors.

CA3227M Quick Information

Product Type: RF Bipolar Transistor Array
Canonical Name: CA3227M 5 NPN RF Transistor
Subcategory: Transistors - Bipolar (BJT) - RF

CA3227M Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

CA3227M Features

  • Five NPN transistors in one package.
  • 3 GHz transition frequency for RF use.
  • Surface mount 16-SOIC package.
  • 8 V collector-emitter breakdown voltage.
  • Minimum DC current gain of 40.

CA3227M Applications

  • Ideal for RF signal amplification circuits.
  • Used in high-frequency switching applications.
  • Suitable for compact multi-transistor designs.

CA3227M FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage?

8 V.

What package does the CA3227M come in?

16-SOIC (0.154", 3.90mm width) surface mount.

What is the transition frequency?

3 GHz.

What is the maximum collector current?

20 mA.

What is the maximum power dissipation?

85 mW.

What is the minimum DC current gain?

40 at Ic=1 mA, Vce=6 V.

How many transistors are in the CA3227M?

5 NPN transistors.

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