Mfr Part #:

CA3096M

Mfr Name: SIL

The SIL CA3096M is a general-purpose high-voltage silicon transistor array. It contains five independent transistors: three NPN and two PNP types.

✓ Total Stock: 963 pcs

$ Price Range: $0.39

CA3096M Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	963 pcs On Request	963 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

CA3096M Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	SIL
Mounting Type	Through Hole
Operating Temperature	-55 to 125°C
SVHC Present	Not Present
Tape & Reel	Yes

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CA3096M Description

Short technical summary and product information.

The CA3096M from SIL is a versatile transistor array comprising three independent NPN and two independent PNP transistors on a common substrate. This configuration allows for maximum flexibility in circuit design, making it suitable for applications such as differential amplifiers, DC amplifiers, sense amplifiers, level shifters, timers, lamp and relay drivers, thyristor firing circuits, temperature-compensated amplifiers, and operational amplifiers.

The device operates across a temperature range of -55°C to 125°C. It is available in both 16-lead PDIP and 16-lead SOIC packages, supporting through-hole mounting.

Key electrical characteristics include breakdown voltages for NPN and PNP transistors, current gain (hFE) at specified currents, collector cutoff current (ICBO), collector-emitter cutoff current (ICEO), and collector-emitter saturation voltage (VCE(SAT)). These parameters vary slightly between the CA3096A, CA3096, and CA3096C variants, with the CA3096A offering tighter parameter matching and the CA3096C being a more relaxed version.

CA3096M Quick Information

Product Type: Transistor Array

Canonical Name: CA3096M NPN/PNP Transistor Array

Subcategory: NPN/PNP

CA3096M Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

CA3096M Estimated Pricing

Qty	Low	High
1+	$0.39	$0.39

Estimated market price range - modelled values for guidance only, not live distributor offers.

CA3096M Features

Integrates multiple NPN and PNP transistors.
NPN VCEO rated at 35V minimum.
PNP VCEO rated at -40V minimum.
High DC current gain from 150 to 500 (NPN).
Wide operating temperature range of -55 to 125°C.

CA3096M Applications

Suitable for differential amplifiers.
Used in DC amplifier circuits.
Applicable for level shifting.
Ideal for lamp and relay drivers.
Useful for thyristor firing circuits.

CA3096M FAQs

6 frequently asked questions generated from this part’s specifications.

What is the operating temperature range of the CA3096M?

The CA3096M operates from -55°C to 125°C.

What packages are available for the CA3096M?

The CA3096M is available in 16-Lead PDIP and 16-Lead SOIC packages.

What are the breakdown voltages for the NPN transistors in the CA3096M?

The NPN transistors have a minimum V(BR)CEO of 35V and a minimum V(BR)CBO of 45V.

What are the breakdown voltages for the PNP transistors in the CA3096M?

The PNP transistors have a minimum V(BR)CEO of -40V and a minimum V(BR)CBO of -40V.

What is the DC current gain (hFE) of the NPN transistors?

The NPN transistors have a DC current gain of 150 to 500 at 1mA collector current.

What is the maximum collector-emitter saturation voltage for the NPN transistors?

The maximum collector-emitter saturation voltage (VCE(SAT)) for the NPN transistors is 0.5V.