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260 pcs
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260 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The CA3096E is a versatile high voltage silicon transistor array manufactured by SIL. This component integrates five independent transistors, comprising three NPN and two PNP types, all on a common substrate with a separate connection. The independent connections for each transistor offer maximum flexibility in circuit design.
Key electrical characteristics include a Collector-to-Emitter Breakdown Voltage of 35V for NPN and -40V for PNP transistors. The DC Current Gain (hFE) for NPN transistors ranges from 150-500 at 1mA, while PNP transistors range from 20-200 at 1mA. The device is designed for operation within a temperature range of -55°C to 125°C.
Applications for the CA3096E include differential amplifiers, DC amplifiers, sense amplifiers, level shifters, timers, lamp and relay drivers, thyristor firing circuits, temperature-compensated amplifiers, and operational amplifiers. It is available in PDIP and SOIC packages.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.39 | $0.39 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The CA3096E array contains three independent NPN transistors and two independent PNP transistors.
The CA3096E operates within a temperature range of -55°C to 125°C.
The Collector-to-Emitter Breakdown Voltage for the NPN transistors is 35V.
The Collector-to-Emitter Breakdown Voltage for the PNP transistors is -40V.
The DC Current Gain (hFE) for NPN transistors at 1mA is between 150 and 500.
The Collector-Emitter Saturation Voltage for NPN transistors is a maximum of 0.5V.