M74HC08RM13TR
ST
The STMicroelectronics M74HC08RM13TR is a 4-channel, 2-input AND Gate logic IC. It operates within a 2V to 6V supply voltage range and is available in a surface mount 14-SOIC package.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
42,000 pcs
|
42000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Operating Temperature |
The CA3096CE by SIL is a versatile transistor array designed for general-purpose applications. This device integrates five independent transistors, consisting of three NPN and two PNP types, all sharing a common substrate with a separate connection for maximum design flexibility.
Key electrical characteristics include a minimum collector-to-emitter voltage (VCEO) of 24V for NPN and -24V for PNP transistors. The collector-to-base voltage (VCBO) is rated at a minimum of 30V for NPN and -24V for PNP. The DC current gain (hFE) at 1mA for NPN transistors ranges from 100 to 670, and for PNP transistors, it ranges from 15 to 200. At 100μA, the PNP hFE is between 30 and 300.
This transistor array operates within a temperature range of -55°C to 125°C. It is supplied in a 16-lead PDIP package, suitable for through-hole mounting.
Applications for the CA3096CE include differential amplifiers, DC amplifiers, sense amplifiers, level shifters, timers, lamp and relay drivers, thyristor firing circuits, temperature-compensated amplifiers, and operational amplifiers.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.39 | $0.39 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The CA3096CE supports a minimum collector-to-emitter breakdown voltage of 24V for both its NPN and PNP sections.
The component is housed in a 16-pin dual in-line package (PDIP) for through-hole mounting.
The CA3096CE operates reliably across a temperature range from -55°C to 125°C.
The NPN transistor exhibits a current gain (hFE) between 100 and 670 at a 1mA test condition.
The NPN section has a maximum collector-emitter saturation voltage of 0.7V.
