| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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354 pcs
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354 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Lead Spacing | |
| Lead Style | |
| Operating Temperature | |
| SVHC Present | |
| Tape & Reel |
The CA3096AM96 from Intersil is a versatile transistor array designed for general-purpose applications. It integrates five independent transistors, consisting of three NPN and two PNP types, sharing a common substrate with a separate connection for flexibility in circuit design.
This array offers robust electrical characteristics, including a minimum collector-to-emitter breakdown voltage of 35V for NPN and -40V for PNP transistors. The NPN transistors provide a minimum hFE of 150-500 at 1mA, while the PNP transistors offer a range of 20-200 at 1mA and 40-250 at 100μA. Maximum collector-emitter saturation voltage for NPN is 0.5V.
The device operates across a wide temperature range of -55°C to 125°C. It is supplied in a 16-lead SOIC package, suitable for surface mounting and tape and reel packaging for automated assembly processes.
Key applications include differential amplifiers, DC amplifiers, sense amplifiers, level shifters, timers, lamp and relay drivers, thyristor firing circuits, temperature-compensated amplifiers, and operational amplifiers.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The CA3096AM96 contains three independent NPN transistors and two independent PNP transistors.
The operating temperature range for the CA3096AM96 is -55 to 125°C.
The CA3096AM96 is available in a 16-SOIC package.
Yes, the CA3096AM96 is available in tape and reel packaging.
The minimum collector-to-emitter breakdown voltage for the NPN transistors is 35V.
The minimum collector-to-emitter breakdown voltage for the PNP transistors is -40V.
The maximum collector-emitter saturation voltage for the NPN transistors is 0.5V.