| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,358 pcs
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6358 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The CA3083Z is a versatile array of five high current NPN transistors on a common monolithic substrate, manufactured by Renesas (formerly Intersil). Two of the transistors (Q1 and Q2) are matched at low current (1mA) for applications requiring low offset parameters, with a maximum VBE match of ±5mV and input offset current of 2.5µA.
Electrical specifications include a maximum collector-emitter voltage (VCEO) of 15V, collector-base voltage (VCBO) of 20V, and collector current (IC) of 100mA. The DC current gain (hFE) is minimum 40 at 50mA and 3V, and the saturation voltage (VCE sat) is maximum 700mV at 50mA. The transition frequency (ft) is 450MHz, making it suitable for applications from DC to VHF.
The device is housed in a 16-DIP (0.300", 7.62mm) through-hole package with a supplier device package of 16-PDIP. It operates over a junction temperature range up to 150°C and is RoHS3 compliant with Pb-free finish. Each transistor has independent connections plus a separate substrate terminal for maximum design flexibility.
16-DIP (0.300", 7.62mm) with supplier device package 16-PDIP.
Maximum junction temperature is 150°C.
Yes, RoHS3 compliant per datasheet.
5 NPN transistors.
15V.
100mA.
450MHz.