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390 pcs
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390 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba C5354 is a Silicon NPN Triple Diffused Type transistor engineered for demanding applications such as switching regulators and high-speed DC-DC converters. It boasts excellent switching times, with a typical rise time of 0.7 μs and fall time of 0.5 μs when operating at IC = 2 A.
This transistor offers a high breakdown voltage of VCEO = 800 V and VCBO = 900 V, making it suitable for high-voltage environments. The absolute maximum ratings include a collector current of 5 A (DC) and 8 A (Pulse), with a collector power dissipation of 100 W at 25°C.
Key electrical characteristics include a minimum DC current gain (hFE) of 10 at VCE = 5 V and IC = 1 mA, and 15 at VCE = 5 V and IC = 0.5 A. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 1.0 V at IC = 2 A and IB = 0.4 A, with a base-emitter saturation voltage (VBE(sat)) of 1.3 V under the same conditions.
The device has a junction temperature of 150°C and a storage temperature range of -55°C to 150°C. It is packaged in a 2-16C1A package, weighing approximately 4.7 g.
| Qty | Low | High |
|---|---|---|
| 1+ | $165.89 | $165.89 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the C5354 transistor is 800 V.
The C5354 transistor has a maximum rise time (tr) of 0.7 μs and a maximum fall time (tf) of 0.5 μs when IC = 2 A.
The C5354 transistor has a DC collector current (IC) rating of 5 A and a pulse collector current (ICP) rating of 8 A.
The maximum power dissipation (PC) for the C5354 transistor is 100 W at 25°C.
The C5354 transistor operates within a junction temperature range of -55°C to 150°C.