UWX0J101MCR1GB
Nichicon
This Nichicon UPW2C3R3MPD1TD is an aluminum electrolytic capacitor with a capacitance of 3.3 µF and a rated voltage of 160V. It is designed for general purpose applications.
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92 pcs
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92 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The C4D20120H is a Silicon Carbide (SiC) Schottky Rectifier from Wolfspeed (formerly Cree), designed for high-frequency operation and efficiency. It features a 1200V repetitive peak reverse voltage and a continuous forward current rating of 20A at 135°C.
Key electrical characteristics include a typical forward voltage of 1.5V at 20A and 25°C, and a low reverse current. The diode boasts zero reverse recovery current, contributing to reduced switching losses and higher overall efficiency. Its temperature-independent switching and positive temperature coefficient on VF allow for parallel device operation without thermal runaway.
This rectifier is suitable for applications such as Switch Mode Power Supplies (SMPS), boost diodes in PFC or DC/DC stages, and free-wheeling diodes in inverter stages. The component is supplied in a TO-247-2 package, designed for through-hole mounting.
With a power dissipation of 106.5W at 110°C and a thermal resistance from junction to case of 0.61°C/W, the C4D20120H is engineered for demanding power applications.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive peak reverse voltage (VRRM) for the C4D20120H is 1200 V.
The continuous forward current (IF) rating at 135°C for the C4D20120H is 26 A.
The operating junction and storage temperature range for the C4D20120H is -55°C to +175°C.
The C4D20120H is supplied in a TO-247-2 package.
The typical forward voltage (VF) at 20A and 25°C for the C4D20120H is 1.5 V.
The typical reverse current (IR) at 1200V and 25°C for the C4D20120H is 35 µA.
The typical total capacitance (C) at 0V and 1MHz for the C4D20120H is 1500 pF.
