| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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20,000 pcs
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20000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BZX79B5V1 is a Zener diode manufactured by NXP Semiconductors, designed for voltage regulation applications. It is constructed using silicon planar technology and comes in a standard DO-35 glass case.
Key electrical characteristics include a maximum power dissipation of 500mW at an ambient temperature of 25°C, and a typical forward voltage of 0.9V at 10mA. The junction temperature is rated up to 200°C, with a storage temperature range also from -65°C to 200°C. It can handle a continuous forward current of up to 250mA and a peak reverse power dissipation of 40 Watts for non-repetitive pulses of 100ms.
The thermal resistance from junction to ambient air is typically 0.3°C/W. The Zener voltages are graded according to the international E24 standard, with higher voltages and tighter tolerances available upon request. The diode features a cathode mark for polarity identification.
This component is suitable for various electronic circuits requiring stable voltage references. Its through-hole mounting type makes it convenient for breadboarding and through-hole PCB assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.04 | $0.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum power dissipation for the BZX79B5V1 is 500mW at an ambient temperature of 25°C.
The typical forward voltage for the BZX79B5V1 at a forward current of 10mA is 0.9V.
The BZX79B5V1 comes in a DO-35 glass case.
The junction temperature range for the BZX79B5V1 is -65°C to 200°C.