| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Forward Voltage | |
| Junction Temperature | |
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| Tape & Reel | |
| Temperature Coefficient |
The BZT03C16 from NXP Semiconductors is a Zener Diode belonging to the BZT03-Series. It features a glass-passivated junction and a hermetically sealed package, ensuring reliability.
Key electrical specifications include a nominal Zener voltage of 16V at a test current of 100mA, with a maximum dynamic resistance of 1Ω. It offers a high non-repetitive peak surge power dissipation of 600W for short durations (100 μs pulse width). The device also has a maximum forward voltage of 1.2V at 0.5A.
This Zener Diode is suitable for medium power voltage regulators and transient suppression circuits. It comes in a SOD-57 package, designed for through-hole mounting.
Absolute maximum ratings include a power dissipation of up to 3250mW (at 10mm lead length, 25°C) and 1300mW (at 25°C ambient). The junction temperature can reach up to 175°C, with a storage temperature range of -65°C to +175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.52 | $0.52 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The nominal Zener voltage is 16V.
The non-repetitive peak surge power dissipation is 600W with a 100 μs pulse width.
The package type is SOD-57.
The test current is 100 mA.
The maximum junction temperature is 175°C.