| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,349 pcs
|
1349 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,349 pcs
|
1349 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present | |
| Tape & Reel |
The Vishay Semiconductors BZD27C33P is a silicon planar Zener diode designed for surface-mount applications. It offers a working voltage range of 3.4V to 3.8V at a test current of 100mA, with a maximum forward voltage of 1.2V at 0.2A.
This series features a Zener and surge current specification, low leakage current, and excellent stability. The non-repetitive peak pulse power dissipation is 300W (100µs square pulse). Thermal characteristics include a junction to ambient air thermal resistance of 180 K/W and a junction to lead resistance of 30 K/W, with a maximum junction temperature of 150°C.
The device is housed in a DO-219AB (SMF) low profile surface-mount package, weighing approximately 15 mg. It is suitable for high temperature soldering up to 260°C for 10 seconds at terminals. The BZD27C series is AEC-Q101 qualified and compliant to RoHS directive 2002/95/EC and WEEE 2002/96/EC.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum power dissipation is 2.3 W at a lead temperature (TL) of 80 °C.
The non-repetitive peak pulse power dissipation is 300 W for a 100 µs square pulse, with a junction temperature of 25 °C prior to the surge.
The maximum junction temperature is 150 °C.
The storage temperature range is from -55 °C to +150 °C.
The maximum forward voltage is 1.2 V at a forward current (IF) of 0.2 A.
The package type is DO-219AB (SMF).
The weight of the BZD27C33P is 15 mg.