| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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80 pcs
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80 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BYX55-600P is a silicon diode from General Instrument, designed for through-hole mounting in a DO27 package. This component offers a maximum reverse voltage (VRRM) of 600V and a maximum average forward current (I(out) If AVG) of 1.2A. Its maximum forward voltage (Vf Max.) is 1.2V.
Additional electrical specifications include a reverse current (Ir @ Diff. Temp) of 750µA and a reverse current at 25°C (Ir @25°C) of 10µA. The reverse recovery time (t(rr)) is 350ns. The diode operates within a maximum temperature range of 125°C.
This diode is suitable for various electronic applications requiring a reliable rectifier with these specific electrical characteristics and packaging. The through-hole mounting makes it suitable for traditional PCB assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.76 | $1.76 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage (VRRM) for the BYX55-600P diode is 600V.
The BYX55-600P diode has a maximum average forward current (I(out) If AVG) of 1.2A.
The maximum forward voltage (Vf Max.) for the BYX55-600P diode is 1.2V.
The BYX55-600P diode has a maximum operating temperature of 125°C.
The BYX55-600P diode is in a DO27 package.
The BYX55-600P diode is designed for through-hole mounting.