| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
375 pcs
|
375 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Diode Capacitance | |
| Mounting Type | |
| Peak Forward Surge Current | |
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| Tape & Reel |
The BYW56 is a silicon mesa rectifier diode manufactured by NXP Semiconductors. It is designed for general-purpose rectification applications and offers controlled avalanche characteristics, a glass-passivated junction, and a hermetically sealed package.
Key electrical specifications include a maximum reverse voltage of 1000V, a peak forward surge current of 50A, and an average forward current of 2A. The diode also exhibits a typical forward voltage of 0.9V at 1A and a low reverse current. Its junction and storage temperature range is from -55°C to 175°C.
With a thermal resistance of 45 K/W junction-to-ambient for a 10mm lead length, the BYW56 is suitable for various power applications. The component is designed for through-hole mounting.
Electrically equivalent diodes include the 1N5059, 1N5060, 1N5061, and 1N5062 from Vishay Telefunken.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BYW56 has a maximum reverse voltage of 1000V.
The BYW56 can handle a peak forward surge current of 50A.
The average forward current for the BYW56 is 2A.
The typical forward voltage for the BYW56 at 1A is 0.9V.
The BYW56 operates within a junction and storage temperature range of -55°C to 175°C.
The junction ambient thermal resistance is 45 K/W for a 10mm lead length and 100 K/W on a PC board with 25mm spacing.