| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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15 pcs
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15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BYW31-150 is a silicon diode from NXP Semiconductors, designed for applications requiring high voltage and current handling capabilities. It offers a maximum reverse voltage (VRRM) of 150V and an average forward current (If AVG) of up to 25A.
This diode has a maximum forward voltage (Vf) of 1.3V at 1.0A and 100A test conditions. The reverse leakage current (Ir) is rated at 100µA at 25°C and 1.5mA at a different temperature.
Packaged in a DO4 case, the BYW31-150 is not a surface-mounted component. It operates within a maximum temperature range of 150°C. The reverse recovery time (trr) is specified as 40ns at 100°C.
This component is suitable for various power electronic applications where reliable rectification and high current capacity are essential.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.26 | $1.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage (VRRM) for the BYW31-150 diode is 150V.
The BYW31-150 diode has a maximum average forward current of 25A.
The maximum forward voltage (Vf Max.) for the BYW31-150 diode is 1.3V.
The reverse recovery time (trr) for the BYW31-150 diode is 40ns at 100°C.
The BYW31-150 diode has a maximum operating temperature of 150°C.
The BYW31-150 diode is in a DO4 case.