| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,222 pcs
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4222 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Forward Voltage | |
| Reverse Recovery Time |
The BYV36E is an avalanche rectifier diode manufactured by NXP Semiconductors. This component is designed for applications requiring high voltage handling, with a reverse standoff voltage of 1kV.
Key electrical specifications include a maximum output current of 810mA and a maximum forward voltage of 1.05V. The diode also has a maximum forward surge current rating of 30A and a reverse recovery time of 150ns. It operates within a temperature range of -65°C to 175°C.
This diode is suitable for various electronic circuits where reliable rectification and avalanche protection are necessary. Its robust design ensures performance under demanding conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.26 | $1.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum output current for the BYV36E is 810mA.
The reverse standoff voltage of the BYV36E is 1kV.
The forward voltage of the BYV36E is 1.05V.
The reverse recovery time for the BYV36E is 150ns.
The operating temperature range for the BYV36E is -65°C to 175°C.