| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
812 pcs
|
812 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The BYV32E-200 is a dual epitaxial rectifier diode manufactured by NXP Semiconductors. It is housed in a SOT78 (TO-220AB) plastic package and features a common cathode configuration.
This ultrafast rectifier diode boasts a high reverse voltage surge capability and excellent thermal cycling performance. It has a low thermal resistance and a soft recovery characteristic that minimizes power consuming oscillations. The diode exhibits very low on-state loss, making it efficient for demanding applications.
Key electrical specifications include a maximum repetitive peak reverse voltage of 200V, an average rectified output current of 20A, a typical forward voltage of 1.7V at 10A, and a typical reverse recovery time of 50ns. The operating temperature range is from -40°C to 150°C.
Applications for the BYV32E-200 include output rectifiers in high-frequency switched-mode power supplies. Its rugged construction and performance characteristics make it suitable for various power conversion circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.07 | $1.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive peak reverse voltage is 200V.
The average rectified output current is 20A.
The typical forward voltage is 1.7V at 10A.
The typical reverse recovery time is 50ns.
The operating temperature range is -40°C to 150°C.
It is in a TO-220-3 package.
It is a through-hole mounted component.