| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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40 pcs
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40 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BYV32E-200,127 is a dual ultrafast rectifier diode from NXP Semiconductors, designed for high-frequency switched-mode power supplies. It features a repetitive peak reverse voltage of 200V and an average output current of 20A (both diodes conducting). The forward voltage is typically 0.72V at 8A and 150°C, ensuring low on-state losses. The reverse recovery time is typically 20ns at 25°C, allowing efficient high-frequency operation. The diode is housed in a through-hole TO-220AB package (SOT78) with a lead count of 3. It is RoHS3 compliant and MSL level 1 (unlimited). The device is also rated for 8kV electrostatic discharge (HBM) and offers a non-repetitive peak forward current of 125A (10ms pulse). These characteristics make it suitable for output rectification in SMPS and other power conversion applications.
200V.
20A (both diodes conducting, square-wave pulse, Tmb≤115°C).
Typical 0.72V, maximum 0.85V.
Typical 20ns, maximum 25ns at IF=1A, VR=30V, dIF/dt=100A/μs, 25°C.
TO-220AB (SOT78) through-hole package.
8kV (HBM, C=250pF, R=1.5kΩ, all pins).
Yes, RoHS3 compliant.