| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The BYV21-30 from NXP Semiconductors is a Schottky barrier rectifier diode designed for various electronic applications. This component features a high reverse standoff voltage of 650V and can handle a maximum output current of 20A.
Key electrical characteristics include a typical forward voltage of 2.6V at 1mA and a maximum forward surge current rating of 198A. The diode also has a reverse recovery time of 50ns, making it suitable for applications requiring fast switching.
Operating within a temperature range of -65°C to 175°C, the BYV21-30 is housed in a TO-263AB package. This surface-mount package is commonly used in power applications where efficient heat dissipation is necessary.
This rectifier diode is compliant with RoHS3 standards and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.26 | $1.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum output current for the BYV21-30 is 20A.
The BYV21-30 has a reverse standoff voltage of 650V.
The typical forward voltage for the BYV21-30 is 2.6V.
The maximum forward surge current for the BYV21-30 is 198A.
The reverse recovery time for the BYV21-30 is 50ns.
The BYV21-30 operates from -65°C to 175°C.
The BYV21-30 is supplied in a TO-263AB package.