| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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210 pcs
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210 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BYT12P600 is a silicon diode manufactured by STMicroelectronics, designed for general-purpose applications requiring a high reverse voltage rating. It offers a maximum reverse voltage (VRRM) of 600V and can handle an average forward current (I(out) If AVG) of up to 12A.
The diode exhibits a maximum forward voltage (Vf Max.) of 1.8V at a test current of 1.0A. Its reverse leakage current (Ir) is rated at 50uA at 25°C and 2.5mA at 100°C. The reverse recovery time (t(rr)) is typically 100ns.
This component operates within a maximum temperature range of 150°C. It is packaged in a TO220AC case and is designed for through-hole mounting, not surface mounting.
The BYT12P600 is specified as RoHS3 Compliant, with an MSL rating of 1 Unlimited, and REACH Unaffected. However, these compliance statuses are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BYT12P600 diode has a maximum reverse voltage of 600V.
The BYT12P600 diode has a maximum average forward current of 12A.
The maximum forward voltage for the BYT12P600 diode is 1.8V.
The BYT12P600 diode operates at a maximum temperature of 150°C.
The BYT12P600 diode is supplied in a TO220AC package.