| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,885 pcs
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1885 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This BYD17J avalanche diode from NXP Semiconductors is designed for applications requiring a 600V reverse voltage rating and a 1.5A average rectified current. It exhibits a typical forward voltage of 1.05V at 1A and a reverse leakage current of 1µA at 600V. The diode has a standard recovery speed and a junction operating temperature range of -65°C to 175°C.
Packaged in a surface mount MELF (SOD-87) case, this component is suitable for various electronic designs. Its avalanche technology provides enhanced robustness against voltage transients.
Key electrical characteristics include a capacitance of 21pF at 0V and 1MHz, and a reverse recovery time of 3µs. The RoHS status is listed as RoHS3 Compliant, with an MSL of 1 Unlimited and REACH Unaffected status.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.45 | $0.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BYD17J diode has a maximum DC reverse voltage of 600V.
The BYD17J diode has an average rectified current of 1.5A.
The typical forward voltage for the BYD17J diode at 1A is 1.05V.
The BYD17J diode can operate in a junction temperature range of -65°C to 175°C.
The BYD17J diode is supplied in a surface mount MELF package, specifically SOD-87.