BYV29FX-600
NXP Semiconductors
The BYV29FX-600 is a 600 V, 9 A fast recovery rectifier diode from NXP Semiconductors in a through-hole TO-220F package with a 35 ns reverse recovery time.
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5,100 pcs
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5100 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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The WeEn Semiconductors BYC8X-600 is a hyperfast power diode designed for high-efficiency applications. It features an isolated plastic package (SOD113) with a 600V repetitive peak reverse voltage (VRRM).
Key electrical characteristics include an average forward current (IF(AV)) of 8A and a repetitive peak forward current (IFRM) of 16A. The diode exhibits low reverse recovery time (trr), with values as low as 19ns under specific test conditions, which helps reduce switching losses in associated MOSFETs.
Applications for the BYC8X-600 include Continuous Current Mode (CCM) Power Factor Correction (PFC), half-bridge/full-bridge switched-mode power supplies, and half-bridge lighting ballasts. Its low thermal resistance and isolated package contribute to reliable performance in demanding environments.
The diode has a maximum junction temperature of 150°C and a storage temperature range of -40°C to 150°C. The SOD113 package is a 2-lead TO-220F type, suitable for through-hole mounting.
| Qty | Low | High |
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| 1+ | $0.40 | $0.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive peak reverse voltage (VRRM) for the BYC8X-600 is 600V.
The average forward current (IF(AV)) for the BYC8X-600 is 8A under specified conditions.
The BYC8X-600 is supplied in a SOD113 (2-lead TO-220F) plastic package.
The BYC8X-600 is used in Continuous Current Mode (CCM) Power Factor Correction (PFC), half-bridge/full-bridge switched-mode power supplies, and half-bridge lighting ballasts.
The maximum junction temperature (Tj) for the BYC8X-600 is 150°C.
