BVSS84LT1G P-Channel MOSFET with -50V drain-source voltage and 130mA continuous drain current. Features 10Ω on-resistance and SOT-23-3 surface mount package.
Mfr Part #:

BVSS84LT1G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
P-Channel MOSFET with -50V drain-source voltage and 130mA continuous drain current. Features 10Ω on-resistance and SOT-23-3 surface mount package.
✓ Total Stock: 1,481,572 pcs
$ Price Range: $0.10 - $0.40

BVSS84LT1G Available from 4 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,344,000 pcs
1344000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
136,020 pcs
136020 pcs On Request 1 On Request On Request On Request On Request On Request
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1,077 pcs
1077 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
475 pcs
475 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request

BVSS84LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

BVSS84LT1G Description

Short technical summary and product information.

The BVSS84LT1G is a single P-Channel power MOSFET from On Semiconductor, designed for surface mount applications. It features a maximum drain-to-source voltage of -50V and continuous drain current of -130mA at 25°C ambient temperature.

 

Key electrical characteristics include a maximum on-resistance of 10Ω at VGS = -5V and ID = -100mA, gate threshold voltage range of -0.9V to -2.0V, and input capacitance of 36pF at VDS = 5V. The device is capable of pulsed drain current up to -520mA.

 

The MOSFET is housed in a SOT-23-3 (TO-236) surface mount package, with a maximum power dissipation of 225mW. It operates over a junction temperature range of -55°C to 150°C. The device is RoHS compliant and Pb-Free.

 

This component is suitable for load switching, power management, and other low-power applications requiring a P-Channel MOSFET. The BVSS84LT1G is part of On Semiconductor's portfolio and is available in tape and reel packaging.

BVSS84LT1G Quick Information

Product Type: Power MOSFET
Series: BSS84L
Canonical Name: BVSS84LT1G P-Channel MOSFET
Subcategory: Single P-Channel MOSFET

BVSS84LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BVSS84LT1G Estimated Pricing

Qty Low High
1+ $0.40 $0.40
10+ $0.25 $0.25
100+ $0.16 $0.16
500+ $0.12 $0.12
1,000+ $0.10 $0.10
3,000+ $0.10 $0.10

Estimated market price range - modelled values for guidance only, not live distributor offers.

BVSS84LT1G Features

  • P-Channel MOSFET with -50V drain-source voltage.
  • Continuous drain current of -130mA.
  • Low on-resistance of 10Ω typical.
  • Surface mount SOT-23-3 package.
  • RoHS compliant and Pb-Free.

BVSS84LT1G Applications

  • Load switching in low-power circuits.
  • Power management in portable devices.
  • Battery protection and reverse polarity.
  • Signal switching in analog circuits.

BVSS84LT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

The maximum drain-to-source voltage (Vdss) is -50V.

What package is the BVSS84LT1G available in?

It is available in a SOT-23-3 (TO-236) surface mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the BVSS84LT1G RoHS compliant?

Yes, it is RoHS3 compliant and Pb-Free.

What is the gate threshold voltage?

The gate-source threshold voltage ranges from -0.9V to -2.0V at ID = -250µA.

What is the maximum drain current?

Continuous drain current is -130mA at 25°C, pulsed up to -520mA.

What is the on-resistance?

The static drain-to-source on-resistance is 10Ω maximum at VGS = -5V and ID = -100mA.

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