| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,344,000 pcs
|
1344000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
136,020 pcs
|
136020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,077 pcs
|
1077 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
475 pcs
|
475 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain Current (Maximum @ tp=10 µs) | |
| Drain to Source Voltage (Vdss) | |
| Drain-to-source breakdown voltage | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Body Leakage Current | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate-Source Voltage (Continuous) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Maximum Lead Temperature for Soldering | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Transfer Admittance | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| drain_current (Maximum @ Ta = +25 °C) | |
| gate_source_threshold_voltage (Minimum/Maximum @ VDS = VGS, ID = -250 µA) | |
| thermal_resistance_junction_ambient (Maximum @ JEDEC Standard 51-3/51-7) | |
| thermal_resistance_junction_ambient (Maximum) | |
| zero_gate_voltage_drain_current (Maximum @ VDS = -25 V, VGS = 0 V) | |
| zero_gate_voltage_drain_current (Maximum @ VDS = -50 V, VGS = 0 V) | |
| zero_gate_voltage_drain_current (Maximum @ VDS = -50 V, VGS = 0 V, TJ = 125 °C) |
The BVSS84LT1G is a single P-Channel power MOSFET from On Semiconductor, designed for surface mount applications. It features a maximum drain-to-source voltage of -50V and continuous drain current of -130mA at 25°C ambient temperature.
Key electrical characteristics include a maximum on-resistance of 10Ω at VGS = -5V and ID = -100mA, gate threshold voltage range of -0.9V to -2.0V, and input capacitance of 36pF at VDS = 5V. The device is capable of pulsed drain current up to -520mA.
The MOSFET is housed in a SOT-23-3 (TO-236) surface mount package, with a maximum power dissipation of 225mW. It operates over a junction temperature range of -55°C to 150°C. The device is RoHS compliant and Pb-Free.
This component is suitable for load switching, power management, and other low-power applications requiring a P-Channel MOSFET. The BVSS84LT1G is part of On Semiconductor's portfolio and is available in tape and reel packaging.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.40 | $0.40 |
| 10+ | $0.25 | $0.25 |
| 100+ | $0.16 | $0.16 |
| 500+ | $0.12 | $0.12 |
| 1,000+ | $0.10 | $0.10 |
| 3,000+ | $0.10 | $0.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is -50V.
It is available in a SOT-23-3 (TO-236) surface mount package.
The operating junction temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant and Pb-Free.
The gate-source threshold voltage ranges from -0.9V to -2.0V at ID = -250µA.
Continuous drain current is -130mA at 25°C, pulsed up to -520mA.
The static drain-to-source on-resistance is 10Ω maximum at VGS = -5V and ID = -100mA.