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BVSS138LT1G BVSS138LT1G is an N-Channel power MOSFET from On Semiconductor with 50V drain-source voltage and 200mA continuous drain current. It is housed in a SOT-23-3 surface mount package.
Mfr Part #:

BVSS138LT1G

Available from 6 distributors
Mfr Name: On Semiconductor
On Semiconductor
BVSS138LT1G is an N-Channel power MOSFET from On Semiconductor with 50V drain-source voltage and 200mA continuous drain current. It is housed in a SOT-23-3 surface mount package.
✓ Total Stock: 5,060,315 pcs
$ Price Range: $0.06 - $0.32

BVSS138LT1G Available from 6 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BVSS138LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id
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BVSS138LT1G Description

Short technical summary and product information.

The BVSS138LT1G is an N-Channel MOSFET manufactured by On Semiconductor (onsemi). It is designed for low voltage DC-DC converters and power management in portable and battery-powered devices. The device features a drain-source voltage of 50V and a continuous drain current of 200mA at 25°C, with a pulsed drain current capability of 800mA.

 

Key electrical characteristics include a gate threshold voltage range of 0.85V to 1.5V, making it suitable for low voltage gate drive applications. The maximum drain-source on-resistance is 3.5Ω at 200mA and 5V gate drive. The device is rated for a maximum power dissipation of 225mW at 25°C ambient temperature.

 

The BVSS138LT1G is offered in a SOT-23-3 surface mount package, which saves board space. It is Pb-free, Halogen Free/BFR Free, and RoHS compliant. The device is also AEC-Q101 qualified and PPAP capable for automotive applications.

BVSS138LT1G Quick Information

Product Type: MOSFET
Series: BVSS138L
Canonical Name: BVSS138LT1G N-Channel MOSFET, 50V, 200mA, SOT-23-3
Subcategory: Power MOSFET

BVSS138LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BVSS138LT1G Estimated Pricing

Qty Low High
1+ $0.32 $0.32
10+ $0.15 $0.15
100+ $0.10 $0.10
500+ $0.09 $0.09
1,000+ $0.08 $0.08
3,000+ $0.06 $0.06
6,000+ $0.06 $0.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

BVSS138LT1G Features

  • N-Channel MOSFET with 50V drain-source voltage.
  • Continuous drain current of 200mA at 25°C.
  • Low threshold voltage range of 0.85V to 1.5V.
  • Maximum on-resistance of 3.5Ω at 5V gate drive.
  • Surface mount SOT-23-3 package saves board space.

BVSS138LT1G Applications

  • Ideal for DC-DC converters in portable devices.
  • Power management in battery-powered products.
  • Used in cellular and cordless telephone circuits.
  • Suitable for PCMCIA card power switching.

BVSS138LT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

50V.

What is the package type?

SOT-23-3 surface mount package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the BVSS138LT1G RoHS compliant?

Yes, it is RoHS3 compliant and Pb-free.

What is the maximum drain current?

200mA continuous at 25°C, 800mA pulsed.

What is the gate threshold voltage?

0.85V to 1.5V.

What is the on-resistance?

3.5Ω maximum at 200mA and 5V gate drive.

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