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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
159,000 pcs
|
159000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
15,000 pcs
|
15000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,118 pcs
|
2118 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,118 pcs
|
2118 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,319 pcs
|
1319 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
43 pcs
|
43 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Automotive Qualification | |
| Current | |
| Current - Pulsed Drain (Idm) | |
| Drain to Source Voltage (Vdss) | |
| Drain-Source Breakdown Voltage (V(BR)DSS) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| ESD Classification | |
| FET Type | |
| Forward Transconductance (gfs) | |
| Gate-Body Leakage Current (IGSS) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Coss) | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Transfer Capacitance (Crss) | |
| Supplier Device Package | |
| Switching Time - Turn-On Delay (td(on)) | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance Junction-to-Ambient | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Zero Gate Voltage Drain Current (Maximum @ VGS=0, VDS=100 V, TJ=125 °C) | |
| Zero Gate Voltage Drain Current (Maximum @ VGS=0, VDS=100 V, TJ=25 °C) |
The BVSS123LT1G is an N-Channel power MOSFET from On Semiconductor, designed for low-power switching applications. It features a maximum drain-source voltage of 100V and a continuous drain current of 170mA at 25°C. The device offers a maximum on-resistance of 6 Ohms at 10V gate drive, ensuring efficient switching performance.
This MOSFET is AEC-Q101 qualified for automotive applications and is RoHS3 compliant. It is housed in a compact SOT-23 surface mount package (TO-236-3, SC-59), making it suitable for space-constrained designs. The device operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 225mW on an FR-5 board.
Key electrical characteristics include a gate threshold voltage of 1.6V to 2.6V, low input capacitance of 20pF, and fast switching with a typical turn-on delay time of 20ns. The BVSS123LT1G is the automotive-grade variant of the BSS123LT1G, offering enhanced reliability for demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.44 | $0.44 |
| 10+ | $0.27 | $0.27 |
| 100+ | $0.17 | $0.17 |
| 500+ | $0.13 | $0.13 |
| 1,000+ | $0.11 | $0.11 |
| 3,000+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 100V.
The continuous drain current is 170mA at 25°C ambient temperature.
The maximum on-resistance is 6 Ohms at a drain current of 100mA and gate-source voltage of 10V.
It is available in a SOT-23 surface mount package (TO-236-3, SC-59).
The junction operating temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant as verified by the datasheet.
Yes, it is AEC-Q101 qualified.