| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BUZ80A is an N-channel enhancement mode power MOSFET from Infineon Technologies, part of the SIPMOS family. It offers a drain-source breakdown voltage of 800V and a continuous drain current of 3.6A at 26°C case temperature. The device features a low on-resistance of 3Ω maximum at VGS=10V and ID=2A. It is avalanche-rated with a single pulse avalanche energy of 320mJ. The gate threshold voltage ranges from 2.1V to 4V. Dynamic characteristics include input capacitance of 1350pF maximum, output capacitance of 140pF maximum, and typical switching times of 15ns turn-on delay and 200ns turn-off delay. The MOSFET is housed in a TO-220-3 through-hole package with a junction-to-case thermal resistance of 1.25K/W. Operating temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 500+ | $1.94 | $1.94 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V minimum at VGS=0V, ID=0.25mA, Tj=25°C.
3.6A at case temperature 26°C.
3Ω maximum at VGS=10V, ID=2A.
2.1V minimum, 3V typical, 4V maximum at VDS=VGS, ID=1mA.
-55°C to 150°C junction temperature.
TO-220-3 through-hole package (TO-220AB).
RoHS3 compliant (unverified).