| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,568 pcs
|
2568 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Time | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BUZ73L is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. It features a logic-level gate drive and is avalanche-rated for robust performance in switching applications.
This MOSFET offers a drain-source breakdown voltage of 200V and a continuous drain current of 7A at Tc=28°C. The typical drain-source on-resistance is 300 mΩ at Vgs=5V, with a maximum of 400 mΩ. Gate threshold voltage ranges from 1.2V to 2V, making it suitable for 5V logic drive.
The device is housed in a through-hole TO-220-3 package (PG-TO220-3) and supports a maximum power dissipation of 40W at Tc=25°C. Operating junction temperature range is -55°C to 150°C, with a junction-to-case thermal resistance of 3.1 K/W.
The BUZ73L is Pb-free and RoHS3 compliant (unverified). It is designed for general-purpose switching and linear applications where high voltage and moderate current are required.
| Qty | Low | High |
|---|---|---|
| 500+ | $0.58 | $0.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V.
7A at Tc=28°C.
TO-220-3 (PG-TO220-3).
-55°C to 150°C.
Yes, RoHS3 compliant (unverified).
1.2V typical, 2V maximum at Id=1mA.
400 mΩ at Vgs=5V, Id=3.5A.