| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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498 pcs
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498 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BUZ73A is an N-Channel enhancement-mode MOSFET manufactured by Infineon Technologies. It is designed for high-voltage switching applications and features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 5.5A at case temperature. The device utilizes MOSFET (Metal Oxide) technology.
Electrical characteristics include a maximum on-resistance (Rds(on)) of 600mOhm at a gate-source voltage of 10V and drain current of 4.5A. The gate threshold voltage (Vgs(th)) is 4V maximum at Id=1mA. The maximum gate-source voltage is ±20V. Input capacitance (Ciss) is 530 pF at Vds=25V. Power dissipation is rated at 40W at case temperature 25°C.
The BUZ73A is offered in a TO-220-3 through-hole package with a PG-TO220-3 supplier package designation. It is designed for through-hole mounting and has three leads. The operating junction temperature range is -55°C to 150°C, making it suitable for demanding environments. Applications include switching power supplies, motor control, and general-purpose high-voltage switching circuits.
The maximum drain-source voltage (Vdss) is 200 V.
The maximum continuous drain current is 5.5 A at case temperature (Tc).
It is available in a TO-220-3 through-hole package (PG-TO220-3).
The operating junction temperature range is -55°C to 150°C.
The RoHS status is listed as RoHS3 Compliant, but this is unverified and has low confidence due to conflicting sources.
The maximum gate threshold voltage is 4 V at a drain current of 1 mA.
The maximum drain-source on-resistance is 600 mOhm at 10 V gate voltage and 4.5 A drain current.