| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BUZ73A is an N-Channel enhancement mode MOSFET manufactured by Harris Semiconductor. It features a maximum drain-to-source voltage of 200V and a continuous drain current of 5.5A at case temperature. The device has a maximum on-resistance of 600mOhm at 4.5A gate drive of 10V. It is designed for switching and amplification applications in power electronics. The MOSFET is housed in a TO-220-3 through-hole package (PG-TO220-3) suitable for PCB mounting. It operates over a junction temperature range of -55°C to 150°C. The gate threshold voltage is 4V at 1mA drain current, and the maximum gate-source voltage is ±20V. Input capacitance is 530pF at 25V drain-source voltage. Power dissipation is 40W at case temperature. The device is RoHS3 compliant (unverified) and has MSL level 1 unlimited. It is suitable for various power management and switching applications.
| Qty | Low | High |
|---|---|---|
| 472+ | $0.64 | $0.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 200V.
The maximum drain current is 5.5A at case temperature (Tc).
The maximum on-resistance (Rds on) is 600mOhm at Id=4.5A and Vgs=10V.
It is available in a TO-220-3 through-hole package (PG-TO220-3).
The operating junction temperature range is -55°C to 150°C.
It is marked as RoHS3 compliant, but this status is unverified.
The maximum gate threshold voltage (Vgs(th)) is 4V at Id=1mA.