| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,336 pcs
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2336 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUZ72A is an N-channel enhancement mode power MOSFET from Infineon Technologies. It is rated for a minimum drain-source breakdown voltage of 100V and a continuous drain current of 9A at 25°C case temperature. Pulsed drain current capability is 36A, and the device is avalanche-rated for single-pulse energy of 59mJ.
The on-resistance is specified at 0.2Ω typical and 0.25Ω maximum with VGS=10V and ID=6A. Gate threshold voltage ranges from 2.1V to 4V, enabling compatibility with standard logic-level drive circuits. Switching times are moderate, with typical rise and fall times of 45ns and 40ns under defined conditions.
The BUZ72A is housed in a TO-220 AB through-hole package, providing efficient thermal transfer for power dissipation up to 40W at 25°C case temperature. Operating junction temperature range is -55°C to +150°C, with junction-to-case thermal resistance of 3.1 K/W. These characteristics support its use in power conversion and switching applications.
Minimum 100V at VGS=0V, ID=0.25mA, Tj=25°C.
TO-220 AB, through-hole mounting.
-55°C to +150°C.
Listed as RoHS3 compliant, though the data is unverified.
9A at TC=25°C.
0.2Ω typical, 0.25Ω maximum at VGS=10V, ID=6A.
59mJ with ID=10A, VDD=25V, RGS=25Ω, L=885µH, Tj=25°C.