| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8 pcs
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8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUZ54A is an N Channel MOSFET Transistor from Siemens, housed in a TO3 package. This component is specified with a breakdown voltage drain-source (Vbr DSS) of 1000V and a maximum continuous drain current (Id) of 4.6A. Its maximum power dissipation (Max. PD) is rated at 125W, and it can operate in temperatures up to 150°C.
Key electrical characteristics include a maximum gate-source breakdown voltage (Vbr GSS) of 20V, input capacitance (Ciss) of 5.0nF, and a maximum on-resistance (R(ds) On) of 2.6 Ohms. The fall time (t(f)) is specified at a maximum of 140ns, and the forward transconductance (gfs) ranges from a minimum of 1.4S to a maximum of 2.0S. The drain-source saturation current (Idss) is a maximum of 250µA.
This transistor is suitable for applications requiring high voltage and current handling capabilities. Its TO3 package is designed for through-hole mounting, facilitating integration into circuit designs. The component is identified as RoHS3 Compliant, with an MSL of 1, and REACH Unaffected status.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage (Vbr DSS) for the BUZ54A is 1000V.
The maximum continuous drain current (Id) for the BUZ54A is 4.6A.
The maximum operating temperature for the BUZ54A is 150°C.
The BUZ54A is available in a TO3 package.
The BUZ54A is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BUZ54A is 1 Unlimited.