| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7 pcs
|
7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Lead Spacing | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Storage Temperature | |
| Tape & Reel |
The BUZ54A is an N Channel MOSFET transistor from NXP Semiconductors, designed for various electronic applications. It offers a high breakdown voltage (Vbr DSS) of 1000V and a continuous drain current (Id) of up to 4.6A.
Key electrical characteristics include an input capacitance (Ciss) of 5.0nF, a forward transconductance (gfs) ranging from 1.4 to 2.0, and an on-resistance (Rds On) of 2.6 Ohms. The device operates within a temperature range of up to 150°C.
Packaged in a TO-3 case, this transistor is suitable for through-hole mounting. Its specifications make it a robust component for power switching and amplification circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum operating temperature for the BUZ54A is 150°C.
The BUZ54A has a Vbr DSS of 1000V.
The continuous drain current (Id) for the BUZ54A is 4.6A.
The BUZ54A is available in a TO-3 package.