| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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14 pcs
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14 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUZ44 is a single, pre-biased bipolar junction transistor manufactured by SIE. It is suitable for high-voltage switching and amplification circuits, with a drain-source breakdown voltage of 500V and a drain current of 5.6A. The device is packaged in a TO-3 case, which allows for robust mounting and heat dissipation. Its maximum Rds(on) of 1.1 Ohms makes it suitable for power switching applications where low on-resistance is desired.
This transistor can be used in power supplies, motor control, and high-voltage switching circuits. Its high breakdown voltage and current handling capabilities make it appropriate for demanding electrical environments. The TO-3 package facilitates efficient heat transfer, supporting high power dissipation up to 78W. The device's electrical characteristics include a gate-source leakage current of 100nA and an input capacitance of 30pF, which are relevant for circuit design considerations.
The BUZ44's specifications support its use in applications requiring high voltage and power handling, with a maximum collector-emitter voltage of 25V and a continuous drain current of 2.8A at 2.8A test condition. It is RoHS compliant, and its environmental certifications include REACH unaffected status. The device's electrical parameters and package make it suitable for high-voltage, high-current switching and amplification tasks in various electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BUZ44 has a drain-source breakdown voltage of 500V.
The BUZ44 is packaged in a TO-3 case.