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BUZ355

The BUZ355 is an N-Channel enhancement mode power MOSFET from Infineon Technologies. It features a 800V drain-source voltage and 6A continuous drain current.

✓ Total Stock: 325 pcs

BUZ355 Available from 1 distributor

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Components Technology Group, Inc. ✓ Non-Authorised Inventory information	325 pcs On Request	325 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

BUZ355 Specifications Quick View

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Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Input Capacitance	1750 pF (typ), 2350 pF (max)
Mode	Enhancement
Mounting Type	Through Hole
Power Dissipation	125 W
Reverse Recovery Time	0.3 µs
Storage Temperature	-55 °C to +150 °C

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BUZ355 Description

Short technical summary and product information.

The BUZ355 is an N-Channel enhancement mode SIPMOS power transistor from Infineon Technologies. It is designed for high-voltage switching applications with a maximum drain-source voltage of 800V and a continuous drain current rating of 6A at 29°C case temperature. The device offers a typical on-resistance of 0.9 Ohms and a maximum of 1.5 Ohms at VGS = 10V.

This MOSFET is avalanche-rated, with a single pulse avalanche energy rating of 720 mJ. It features a gate threshold voltage range of 2.1V to 4V and a maximum power dissipation of 125W at 25°C case temperature. The operating junction temperature range is -55°C to +150°C.

The BUZ355 is housed in a TO-218AA package with through-hole mounting. It includes an integrated inverse diode with a continuous forward current rating of 4A and a typical reverse recovery time of 0.3 microseconds.

BUZ355 Quick Information

Product Type: Power MOSFET

Series: BUZ355

Canonical Name: Infineon BUZ355 N-Channel Enhancement Mode Power MOSFET

Subcategory: N-Channel MOSFET

BUZ355 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

BUZ355 Features

N-Channel enhancement mode power MOSFET.
800V maximum drain-source voltage rating.
6A continuous drain current capability.
Avalanche-rated with 720 mJ single pulse energy.
TO-218AA through-hole package for easy mounting.

BUZ355 Applications

Suitable for high-voltage switching power supplies.
Used in motor control and drive circuits.
Ideal for DC-DC converter applications.
Applicable in UPS and inverter systems.

BUZ355 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the BUZ355?

The maximum drain-source voltage (VDS) is 800 V.

What is the continuous drain current rating of the BUZ355?

The continuous drain current (ID) is 6 A at a case temperature of 29 °C.

What is the typical on-resistance of the BUZ355?

The typical drain-source on-resistance (RDS(on)) is 0.9 Ohms at VGS = 10 V and ID = 3.9 A.

What package does the BUZ355 come in?

The BUZ355 is available in a TO-218AA package.

What is the operating temperature range of the BUZ355?

The operating junction temperature range is -55 °C to +150 °C.

Is the BUZ355 RoHS compliant?

The BUZ355 is listed as RoHS3 Compliant, but this information is unverified.