| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BUZ32 is a N-Channel enhancement mode MOSFET from Infineon Technologies, part of the SIPMOS family. It is rated for a drain-source voltage of 200V and a continuous drain current of 9.5A at case temperature 29°C. The device features a maximum drain-source on-resistance of 0.4 ohms at Vgs=10V and Id=6A, making it suitable for efficient power switching.
Key electrical characteristics include a gate threshold voltage of 4V max, input capacitance of 530pF max, and fast switching speeds with turn-on delay time of 15ns max and rise time of 60ns max. The device is avalanche-rated, with a single pulse avalanche energy of 120mJ.
The BUZ32 is packaged in a standard TO-220-3 through-hole package (supplier package PG-TO220-3), which allows for easy mounting on heatsinks. It is designed for operation over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 75W at case temperature 25°C.
| Qty | Low | High |
|---|---|---|
| 500+ | $0.82 | $0.82 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BUZ32 has a maximum drain-source voltage (Vdss) of 200V.
The BUZ32 is available in a TO-220-3 through-hole package (supplier package PG-TO220-3).
The operating junction temperature range is -55°C to 150°C.
The BUZ32 is reported as RoHS3 compliant, but this is unverified low-confidence data.
The continuous drain current is 9.5A at case temperature 29°C.
The maximum drain-source on-resistance is 0.4 ohms at Vgs=10V and Id=6A.
The maximum gate threshold voltage is 4V at Id=1mA.