| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon BUZ30AH is an N-Channel enhancement-mode power MOSFET built with planar technology. It is designed for high-efficiency switching and linear applications requiring a 200V maximum drain-source breakdown voltage. The device can handle a continuous drain current of 21A at case temperature, with power dissipation up to 125W. The on-resistance is typically 130mOhm at 13.5A and 10V gate drive, enabling low conduction losses.
This MOSFET is housed in a standard through-hole TO-220-3 package (supplier package PG-TO220-3), suitable for board-level mounting with heat sinking. The gate threshold voltage is 4V maximum at 1mA drain current, and the maximum gate-source voltage is ±20V. Input capacitance is 1900pF at 25V drain-source bias. The device operates over a junction temperature range of -55°C to +150°C, providing robust thermal headroom in demanding environments.
Intended for use in power management, DC-DC converters, and motor control circuits, the BUZ30AH combines high voltage capability with moderate current handling. Compliance is noted for RoHS and REACH, though unverified per database records. No datasheet is currently linked; please confirm specifications with the manufacturer for critical designs.
The maximum drain-to-source voltage (Vdss) is 200 V.
The maximum continuous drain current is 21 A at case temperature (Tc).
The maximum drain-source on-resistance is 130 mOhm at Id=13.5A and Vgs=10V.
The operating junction temperature range is -55°C to +150°C.
The BUZ30AH is available in a through-hole TO-220-3 package (PG-TO220-3).
Maximum power dissipation is 125 W at case temperature (Tc).
The maximum gate threshold voltage is 4 V at Id=1mA.