| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 1322+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon BUZ30A H3045A is an N-channel enhancement-mode power MOSFET manufactured using advanced MOSFET technology. It is designed for high-efficiency power conversion applications. Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 200V and a continuous drain current (Id) of 21A at case temperature Tc. The maximum on-state resistance (Rds(on)) is 130 milliohms at a gate-source voltage of 10V and drain current of 13.5A. The gate threshold voltage (Vgs(th)) is a maximum of 4V at 1mA drain current. The device can handle a maximum power dissipation of 125W at case temperature Tc. The input capacitance (Ciss) is 1900pF at Vds=25V. The operating junction temperature range is -55°C to 150°C. The device is supplied in a surface-mount D²Pak (TO-263-3) package with the supplier device package designation PG-TO263-3-2. The drive voltage for optimal Rds(on) is 10V. The component is listed as RoHS3 compliant, MSL level 1 (unlimited), and REACH unaffected, though these compliance statuses are unverified. No datasheet is currently available for this part.
The maximum drain-to-source voltage is 200V.
It is available in a surface-mount D²Pak (TO-263-3) package, also known as PG-TO263-3-2.
The junction temperature range is -55°C to 150°C.
It is listed as RoHS3 compliant, but this status is unverified.
Maximum gate threshold voltage is 4V at 1mA drain current.
The input capacitance (Ciss) is 1900pF at Vds=25V.
Maximum on-resistance is 130mOhm at 13.5A drain current and 10V gate voltage.