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BUZ30A N-Channel MOSFET, 200V drain-source voltage, 21A continuous drain current, in TO-220-3 through-hole package.
Mfr Part #:

BUZ30A

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET, 200V drain-source voltage, 21A continuous drain current, in TO-220-3 through-hole package.
✓ Total Stock: 5,000 pcs
$ Price Range: $1.12

BUZ30A Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
5,000 pcs
On Request
5000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BUZ30A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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BUZ30A Description

Short technical summary and product information.

The BUZ30A is an N-channel enhancement mode power MOSFET from Infineon Technologies, part of the SIPMOS family. It is designed for high-voltage switching applications with a maximum drain-source voltage of 200V and a continuous drain current of 21A at 26°C case temperature. The device features a low on-resistance of 130 mOhm maximum at Vgs=10V and Id=13.5A, ensuring efficient power conversion.

 

The MOSFET includes avalanche rating for robust operation under single-pulse conditions, with an avalanche energy capability of 450 mJ. It is well-suited for applications such as power supplies, motor control, and DC-DC converters. The device is packaged in a TO-220-3 through-hole package (PG-TO220-3-1) for easy mounting and heat sinking.

 

Key electrical characteristics include a gate threshold voltage range of 2.1V to 4V, input capacitance of 1900 pF max, and a maximum power dissipation of 125W at 25°C case temperature. The operating junction temperature range is -55°C to 150°C, with a thermal resistance of 1 K/W from junction to case.

BUZ30A Quick Information

Product Type: MOSFET
Canonical Name: BUZ30A - N-Channel MOSFET, 200V, 21A, TO-220-3
Subcategory: Single MOSFETs

BUZ30A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BUZ30A Estimated Pricing

Qty Low High
500+ $1.12 $1.12

Estimated market price range - modelled values for guidance only, not live distributor offers.

BUZ30A Features

  • N-channel enhancement mode MOSFET.
  • 200V drain-source voltage rating.
  • 21A continuous drain current.
  • Low on-resistance of 130 mOhm max.
  • Avalanche rated for robust operation.

BUZ30A Applications

  • Ideal for high-efficiency power supplies.
  • Suitable for motor control circuits.
  • Used in DC-DC converters.
  • Power management in industrial systems.

BUZ30A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the BUZ30A?

200V maximum.

What is the continuous drain current?

21A at Tc=26°C.

What is the package type?

TO-220-3 (through-hole).

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the BUZ30A RoHS compliant?

RoHS3 Compliant according to existing data (unverified).

What is the maximum power dissipation?

125W at Tc=25°C.

What is the gate threshold voltage?

Minimum 2.1V, typical 3V, maximum 4V at Id=1mA.

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