| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,020 pcs
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5020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,013 pcs
|
4013 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUZ21 is an N-Channel MOSFET manufactured by STMicroelectronics. This component is designed for power applications, featuring a breakdown voltage of 100V and a continuous drain current of 21A. It has a maximum power dissipation of 75W and a minimum drain-source resistance of 0.085 ohms.
The operating temperature range for the BUZ21 extends up to 150°C, making it suitable for demanding environments. The device is constructed using Silicon Metal-oxide Semiconductor technology.
This MOSFET is part of the broader category of discrete semiconductor products, specifically within the N-Channel MOSFET subcategory. Its specifications make it a versatile component for various power switching and amplification circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage for the BUZ21 is 100V.
The BUZ21 can handle a continuous drain current of 21A.
The maximum power dissipation for the BUZ21 is 75W.
The BUZ21 can operate at temperatures up to 150°C.
The minimum drain-source resistance of the BUZ21 is 0.085 ohms.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.