| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUZ12 is an N-Channel MOSFET Transistor manufactured by Inchange Semiconductor. It is designed for high-speed switching applications requiring low gate drive power.
Key electrical specifications include a Drain-Source Voltage (Vdss) of 50V and a Gate-Source Voltage (Vgs) range of ±20V. The static Drain-Source On-Resistance (RDS(on)) is a low 0.028Ω (Max) at a continuous drain current of 32A. The continuous drain current is rated at 42A at TC=37℃. Total power dissipation (Ptot) is 125W at TC=25℃.
Thermal characteristics include a junction-to-case thermal resistance of 1℃/W and a junction-to-ambient thermal resistance of 75℃/W. The operating junction temperature ranges from -55℃ to 150℃, with a similar storage temperature range.
This MOSFET is suitable for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (Vdss) for the BUZ12 is 50V.
The Gate Threshold Voltage (Vgs(th)) ranges from 2.1V to 4V.
The Drain-Source On-Resistance (RDS(on)) is 0.028Ω at VGS=10V and ID=32A.
The continuous Drain Current (ID) is 42A at TC=37℃.
The total power dissipation (Ptot) is 125W at TC=25℃.
The operating junction temperature ranges from -55℃ to 150℃.