BUZ12 The BUZ12 is an N-Channel MOSFET Transistor from Inchange Semiconductor. It features a 50V breakdown voltage and a low 0.028Ω drain-source on-resistance.
Mfr Part #:

BUZ12

Available from 1 distributors
Mfr Name: Siemens
Siemens
The BUZ12 is an N-Channel MOSFET Transistor from Inchange Semiconductor. It features a 50V breakdown voltage and a low 0.028Ω drain-source on-resistance.
✓ Total Stock: 4 pcs
$ Price Range: $0.77

BUZ12 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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4 pcs
4 pcs On Request 1 On Request On Request On Request On Request On Request

BUZ12 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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BUZ12 Description

Short technical summary and product information.

The BUZ12 is an N-Channel MOSFET Transistor manufactured by Inchange Semiconductor. It is designed for high-speed switching applications requiring low gate drive power.

 

Key electrical specifications include a Drain-Source Voltage (Vdss) of 50V and a Gate-Source Voltage (Vgs) range of ±20V. The static Drain-Source On-Resistance (RDS(on)) is a low 0.028Ω (Max) at a continuous drain current of 32A. The continuous drain current is rated at 42A at TC=37℃. Total power dissipation (Ptot) is 125W at TC=25℃.

 

Thermal characteristics include a junction-to-case thermal resistance of 1℃/W and a junction-to-ambient thermal resistance of 75℃/W. The operating junction temperature ranges from -55℃ to 150℃, with a similar storage temperature range.

 

This MOSFET is suitable for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors.

BUZ12 Quick Information

Product Type: MOSFET Transistor
Canonical Name: BUZ12 N-Channel MOSFET Transistor
Subcategory: N-Channel

BUZ12 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BUZ12 Estimated Pricing

Qty Low High
1+ $0.77 $0.77

Estimated market price range - modelled values for guidance only, not live distributor offers.

BUZ12 Features

  • N-Channel MOSFET Transistor
  • 50V Drain-Source Breakdown Voltage
  • 0.028Ω Max Drain-Source On-Resistance
  • 125W Max Power Dissipation
  • Suitable for switching applications

BUZ12 Applications

  • Switching regulators and converters
  • Motor driver circuits
  • Relay driver applications
  • High power bipolar transistor drivers

BUZ12 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum Drain-Source Voltage for the BUZ12?

The maximum Drain-Source Voltage (Vdss) for the BUZ12 is 50V.

What is the typical Gate Threshold Voltage of the BUZ12?

The Gate Threshold Voltage (Vgs(th)) ranges from 2.1V to 4V.

What is the Drain-Source On-Resistance of the BUZ12?

The Drain-Source On-Resistance (RDS(on)) is 0.028Ω at VGS=10V and ID=32A.

What is the maximum continuous Drain Current for the BUZ12?

The continuous Drain Current (ID) is 42A at TC=37℃.

What is the total power dissipation of the BUZ12?

The total power dissipation (Ptot) is 125W at TC=25℃.

What is the operating temperature range for the BUZ12?

The operating junction temperature ranges from -55℃ to 150℃.

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