SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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928 pcs
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928 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUZ12 is an N-Channel MOSFET Transistor manufactured by Vishay Dale. It is designed for applications requiring high speed and low gate drive power, such as switching regulators, switching converters, and motor drivers.
Key electrical specifications include a Drain-Source Breakdown Voltage of 50V and a static Drain-Source On-Resistance (RDS(on)) of 0.028Ω maximum at 32A. The continuous Drain Current is rated at 42A at TC=37℃, with a Total Power Dissipation of 125W at TC=25℃.
This transistor operates within a temperature range of -55℃ to 150℃. The thermal resistance from junction to case is 1℃/W, and from junction to ambient is 75℃/W.
It is suitable for applications like relay drivers and drivers for high power bipolar switching transistors.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain current is 42A at TC=37℃.
The total power dissipation is 125W at TC=25℃.
The operating junction temperature range is -55℃ to 150℃.
The drain-source on-resistance is a maximum of 0.028Ω at VGS=10V and ID=32A.
The drain-source breakdown voltage is 50V.
