| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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13 pcs
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13 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUZ11A is an N-Channel Power MOSFET manufactured by ISSI, utilizing STMicroelectronics' STripFET technology. It is designed for high current, high-speed switching applications and automotive environments. Key electrical characteristics include a 50V drain-source breakdown voltage, a continuous drain current of 26A at 25°C, and a low typical on-resistance of 0.045 Ohms at 10V gate-source voltage.
This MOSFET is rated for a maximum continuous total power dissipation of 75W at 25°C case temperature and can operate in junction temperatures up to 175°C. It features avalanche ruggedness, with a repetitive avalanche current rating of 30A and a single pulse avalanche energy of 120mJ.
The BUZ11A comes in a TO-220 package, suitable for through-hole mounting. Its applications include high current switching, solenoid and relay drivers, regulators, DC-DC converters, and motor control. The device also offers a fast switching performance with typical rise and fall times of 95ns and 20ns respectively.
Additional electrical specifications include a gate threshold voltage typically around 2.1V to 4V, and dynamic parameters such as input capacitance of 1400pF, output capacitance of 200pF, and reverse transfer capacitance of 50pF at 1MHz.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage of the BUZ11A is 50V.
The BUZ11A has a continuous drain current of 26A at a case temperature of 25°C.
The typical static drain-source on-resistance (Rds(on)) for the BUZ11A is 0.045 Ohms when Vgs is 10V and Id is 19A.
The maximum operating junction temperature for the BUZ11A is 175°C.
The BUZ11A is available in a TO-220 package.
The RoHS status of the BUZ11A is RoHS3 Compliant.