BUZ11A The BUZ11A is an N-Channel Power MOSFET from ISSI, designed for high current and high-speed switching applications. It features a 50V breakdown voltage and a continuous drain current of 26A.
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BUZ11A

Available from 1 distributors
Mfr Name: ISSI
ISSI
The BUZ11A is an N-Channel Power MOSFET from ISSI, designed for high current and high-speed switching applications. It features a 50V breakdown voltage and a continuous drain current of 26A.
✓ Total Stock: 13 pcs
$ Price Range: $0.77

BUZ11A Available from 1 distributor

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✓ Non-Authorised
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BUZ11A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Input Capacitance
Mounting Type
Reverse Recovery Time
Storage Temperature
Turn On Time

BUZ11A Description

Short technical summary and product information.

The BUZ11A is an N-Channel Power MOSFET manufactured by ISSI, utilizing STMicroelectronics' STripFET technology. It is designed for high current, high-speed switching applications and automotive environments. Key electrical characteristics include a 50V drain-source breakdown voltage, a continuous drain current of 26A at 25°C, and a low typical on-resistance of 0.045 Ohms at 10V gate-source voltage.

 

This MOSFET is rated for a maximum continuous total power dissipation of 75W at 25°C case temperature and can operate in junction temperatures up to 175°C. It features avalanche ruggedness, with a repetitive avalanche current rating of 30A and a single pulse avalanche energy of 120mJ.

 

The BUZ11A comes in a TO-220 package, suitable for through-hole mounting. Its applications include high current switching, solenoid and relay drivers, regulators, DC-DC converters, and motor control. The device also offers a fast switching performance with typical rise and fall times of 95ns and 20ns respectively.

 

Additional electrical specifications include a gate threshold voltage typically around 2.1V to 4V, and dynamic parameters such as input capacitance of 1400pF, output capacitance of 200pF, and reverse transfer capacitance of 50pF at 1MHz.

BUZ11A Quick Information

Product Type: MOSFET
Canonical Name: BUZ11A N-Channel Power MOSFET
Subcategory: N-Channel

BUZ11A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BUZ11A Estimated Pricing

Qty Low High
1+ $0.77 $0.77

Estimated market price range - modelled values for guidance only, not live distributor offers.

BUZ11A Features

  • N-Channel Power MOSFET
  • 50V Drain-Source Breakdown Voltage
  • 26A Continuous Drain Current
  • Low On-Resistance: 0.045 Ohm Typical
  • TO-220 Package for Through-Hole Mounting

BUZ11A Applications

  • High current, high speed switching
  • Solenoid and relay drivers
  • Regulators and DC-DC converters
  • Motor control and audio amplifiers
  • Automotive applications

BUZ11A FAQs

6 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the BUZ11A MOSFET?

The drain-source breakdown voltage of the BUZ11A is 50V.

What is the continuous drain current for the BUZ11A?

The BUZ11A has a continuous drain current of 26A at a case temperature of 25°C.

What is the typical on-resistance of the BUZ11A?

The typical static drain-source on-resistance (Rds(on)) for the BUZ11A is 0.045 Ohms when Vgs is 10V and Id is 19A.

What is the maximum operating junction temperature for the BUZ11A?

The maximum operating junction temperature for the BUZ11A is 175°C.

What package type is the BUZ11A available in?

The BUZ11A is available in a TO-220 package.

What is the RoHS status of the BUZ11A?

The RoHS status of the BUZ11A is RoHS3 Compliant.

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