| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUZ11A is an N-Channel Power MOSFET manufactured by STMicroelectronics, utilizing STripFET technology. It is designed for high current, high-speed switching applications and offers avalanche ruggedness.
Key electrical specifications include a drain-source breakdown voltage of 50V, a continuous drain current of 26A at 25°C, and a typical static drain-source on-resistance of 0.045 Ohm at 10V gate-source voltage. The device also features a typical gate threshold voltage of 3V and a high current capability.
With a maximum operating junction temperature of 175°C and a total power dissipation of 75W at 25°C, the BUZ11A is suitable for demanding applications. Its thermal resistance junction-to-case is 1.67°C/W.
The MOSFET is housed in a TO-220 package, designed for through-hole mounting. Applications include high current, high-speed switching, solenoid and relay drivers, regulators, DC-DC converters, motor control, and automotive environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.84 | $1.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the BUZ11A is 50V.
The continuous drain current for the BUZ11A at 25°C is 26A.
The typical static drain-source on-resistance is 0.045 Ohm at a gate-source voltage of 10V and a drain current of 19A.
The maximum operating junction temperature is 175°C.
The BUZ11A is available in a TO-220 package.