| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Siemens BUZ11A is a high-performance N-Channel MOSFET belonging to the STripFET family. It is engineered for demanding applications requiring high current capability and fast switching speeds.
Key electrical specifications include a drain-source breakdown voltage of 50V and a continuous drain current of 26A at 25°C. The typical static drain-source on-resistance (RDS(on)) is a low 0.045 Ohms at 10V gate-source voltage and 19A drain current, minimizing conduction losses. Avalanche ruggedness is a notable feature, with 100% avalanche testing and a single pulse avalanche energy rating of 120 mJ.
This MOSFET operates within a wide temperature range, from -65°C to 175°C, making it suitable for harsh environments. The TO-220 package facilitates through-hole mounting and provides adequate thermal dissipation, with a junction-to-case thermal resistance of 1.67°C/W.
Applications for the BUZ11A include high current, high speed switching, solenoid and relay drivers, regulators, DC-DC and DC-AC converters, motor control, and audio amplifiers. It is also well-suited for automotive environments, including injection systems, ABS, and airbag applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 50V.
The continuous drain current is 26A at 25°C.
The typical static drain-source on-resistance is 0.045 Ohms at 10V gate-source voltage and 19A drain current.
The maximum operating junction temperature is 175°C.
The BUZ11A is supplied in a TO-220 package.
Typical switching times include 18ns for turn-on time, 95ns for rise time, 50ns for turn-off delay, and 20ns for fall time.