LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
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The BUZ11 is an N-Channel enhancement mode silicon gate power MOSFET manufactured by STMicroelectronics. It is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors that require high speed and low gate drive power. This device can be operated directly from integrated circuits.
Key electrical specifications include a Drain to Source Breakdown Voltage of 50V, a Continuous Drain Current of 30A at 30°C, and a Pulsed Drain Current of 120A. The On-Resistance (rDS(ON)) is rated at 0.040 Ohms. The Gate to Source Voltage is ±20V.
Thermal characteristics include a Maximum Power Dissipation of 75W at 25°C and a Linear Derating Factor of 0.6W/°C. The operating and storage temperature range is from -55°C to 150°C.
The BUZ11 comes in a TO-220AB package suitable for through-hole mounting.
| Qty | Low | High |
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| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain current is 30A at a case temperature of 30°C.
The Drain to Source Breakdown Voltage is 50V.
The typical on-resistance is 0.040 Ohms.
The operating and storage temperature range is -55°C to 150°C.
The BUZ11 is available in a TO-220AB package.
