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8 pcs
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8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUZ10 is an N-Channel MOSFET from STMicroelectronics, part of the STripFET family. It is designed for high current, high speed switching applications.
Key electrical specifications include a drain-source breakdown voltage of 50V, a continuous drain current of 23A at 25°C, and a typical static drain-source on-resistance of 0.06 Ohms at 10V gate-source voltage. The device also features a typical gate threshold voltage of 2.1V and a maximum operating junction temperature of 175°C.
This MOSFET is suitable for applications such as solenoid and relay drivers, regulators, DC-DC converters, motor control, and audio amplifiers. It is also designed for automotive environments, including injection systems, ABS, and airbag applications.
The BUZ10 comes in a TO-220 package and is designed for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the BUZ10 is 50V.
The continuous drain current (ID) for the BUZ10 is 23A at a case temperature of 25°C.
The typical static drain-source on-resistance (Rds(on)) for the BUZ10 is 0.06 Ohms when the gate-source voltage (VGS) is 10V and the drain current (ID) is 14A.
The typical gate threshold voltage (Vgs(th)) for the BUZ10 is 2.1V.
The maximum operating junction temperature (Tj max) for the BUZ10 is 175°C.
The BUZ10 is available in a TO-220 package.