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BUZ10 N-Channel MOSFET with 50V drain-source voltage and 23A continuous drain current. Housed in a TO-220 package.
Mfr Part #:

BUZ10

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
N-Channel MOSFET with 50V drain-source voltage and 23A continuous drain current. Housed in a TO-220 package.
✓ Total Stock: 2,364 pcs
$ Price Range: $0.60

BUZ10 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
2,336 pcs
On Request
2336 pcs On Request 1 On Request On Request On Request On Request On Request
Partservice ✓
Non-Authorised Inventory information
28 pcs
On Request
28 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BUZ10 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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BUZ10 Description

Short technical summary and product information.

The BUZ10 is an N-Channel enhancement-mode MOSFET from STMicroelectronics, built with STripFET technology. It is rated for a drain-source voltage of 50V and a continuous drain current of 23A at a case temperature of 25°C. The device features a maximum on-resistance of 0.07Ω at VGS=10V and ID=14A, with a typical value of 0.06Ω. It is avalanche rugged and 100% avalanche tested, with a single pulse avalanche energy rating of 150mJ. The gate threshold voltage is a maximum of 4V at VDS=VGS and ID=1mA. The input capacitance is typically 900pF at VDS=25V. The device is designed for high current, high speed switching applications including solenoid and relay drivers, regulators, DC-DC and DC-AC converters, motor control, audio amplifiers, and automotive environments such as injection, ABS, and airbag systems. It is housed in a TO-220 package and can operate at a maximum junction temperature of 175°C.

BUZ10 Quick Information

Product Type: MOSFET
Canonical Name: BUZ10 N-Channel MOSFET, 50V, 23A, TO-220
Subcategory: N-Channel MOSFET

BUZ10 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1
REACH Status: Compliant

BUZ10 Estimated Pricing

Qty Low High
2,000+ $0.60 $0.60

Estimated market price range - modelled values for guidance only, not live distributor offers.

BUZ10 Features

  • N-Channel MOSFET with 50V drain-source voltage.
  • Continuous drain current rating of 23A.
  • Low on-resistance of 0.07Ω typical.
  • Avalanche rugged and 100% tested.
  • Operating temperature up to 175°C.

BUZ10 Applications

  • High current, high speed switching applications.
  • Solenoid and relay driver circuits.
  • DC-DC and DC-AC converters.
  • Motor control and audio amplifiers.
  • Automotive environments (injection, ABS, airbag).

BUZ10 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

50V.

What is the continuous drain current?

23A at Tc=25°C.

What is the gate threshold voltage?

Maximum 4V at VDS=VGS, ID=1mA.

What is the on-resistance?

Maximum 0.07Ω at VGS=10V, ID=14A.

What is the input capacitance?

Typical 900pF at VDS=25V.

What is the operating junction temperature range?

Maximum junction temperature 175°C, storage temperature -65 to 175°C.

What package is it available in?

TO-220.

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