| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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143 pcs
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143 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUY69A is a high voltage NPN silicon transistor from KT, housed in a TO-3 metal case. This multi-epitaxial mesa transistor is engineered for demanding applications such as the horizontal deflection output stage of CTV receivers, high voltage systems, fast switching circuits, and industrial applications.
Key electrical characteristics include a high Collector-Emitter Voltage (VCES) of 1000V and a Collector-Emitter Voltage (VCEO) of 400V. It can handle a continuous Collector Current (IC) of 10A and a peak current (ICM) of 15A. The transistor offers a high DC Current Gain (hFE) of 15 and a Transition Frequency (fT) of 10MHz, indicating good performance in switching applications. Its fast switching speeds are supported by turn-on times as low as 0.2µs and fall times of 0.3µs.
With a maximum power dissipation (Ptot) of 100W at 25°C and a high operating junction temperature (Tj) of 200°C, the BUY69A is suitable for high-power designs. The TO-3 package provides robust thermal management for these conditions. The transistor operates across a wide temperature range from -65°C to 200°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.84 | $1.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCES) for the BUY69A transistor is 1000V.
The BUY69A can handle a maximum continuous Collector Current (IC) of 10A.
The BUY69A transistor has a maximum power dissipation of 100W at 25°C.
The BUY69A transistor uses the TO-3 metal case package.
The BUY69A operates from -65°C to 200°C.
The BUY69A is intended for horizontal deflection output stages of CTV receivers, high voltage, fast switching, and industrial applications, including switching regulators.